Reflective Back Contacts for Ultrathin Cu(In,Ga)Se2-Based Solar Cells
Résumé
We developed a highly reflective back contact for Cu(In,Ga)Se 2 solar cells based on silver encapsulated in a TCOs stack, compatible with substrate configuration. We demonstrated ultra-thin (500 nm) Cu(In,Ga)Se 2 solar cells with 13.5% efficiency and state of the art J SC =28.9 mA/cm 2 , 2.7 mA/cm 2 more than the reference cell on molybdenum. We also demonstrated a 530 nm-thick (Ag,Cu)(In,Ga)Se 2 solar cell on Mo with state of the art efficiency (14.9%) and remarkably high V OC (741 mV) and FF (81.8%). Coupled with a highly reflective back contact for improved J SC , ACIGS has the potential for fabricating a 500 nm-thick ACIGS with 18% efficiency.
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